IRFB3306 - INCHANGE

IRFB3306 N-Channel MOSFET

·High efficiency synchronous rectification in SMPS ·Uninterrruptible power supply ·High speed power switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 620 PD Total Dissipation @TC=25℃ 230 Tj Max. Operat.

Features

·Static drain-source on-resistance: RDS(on) ≤4.2mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRIPTION
·High efficiency synchronous rectification in SMPS
·Uninterrruptible power supply
·High speed power switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 620 PD Total Dissipation @TC=25℃ 230 Tj Max. Operating Junction Temperature 17.