isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3307Z, IIRFB3307Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications .
·Static drain-source on-resistance:
RDS(on) ≤5.8mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
75
IDM
Drain Current-Single Pulsed
480
PD
Total Dissipation @TC=25℃
230
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFB3307 |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRFB3307 |
INCHANGE |
N-Channel MOSFET | |
3 | IRFB3307PbF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRFB3307ZPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRFB3306 |
INCHANGE |
N-Channel MOSFET | |
6 | IRFB3306GPbF |
International Rectifier |
Power MOSFET | |
7 | IRFB3306PBF |
International Rectifier |
Power MOSFET | |
8 | IRFB33N15D |
International Rectifier |
Power MOSFET | |
9 | IRFB33N15D |
INCHANGE |
N-Channel MOSFET | |
10 | IRFB33N15DPbF |
International Rectifier |
Power MOSFET | |
11 | IRFB3004 |
INCHANGE |
N-Channel MOSFET | |
12 | IRFB3004GPbF |
International Rectifier |
Power MOSFET |