PD - 96211 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Fr.
Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
eSingle Pulse Avalanche Energy ÃdAvalanche Current dRepetitive Avalanche Energy
Thermal Resistance
Symbol RθJC
Parameter
jJunction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
RθJA Junction-to-Ambient, TO-220
D D ra in
S Source
Max.
160 110
120 620 230 1.5 ± 20 14 -55 to + 175
300
x x10lbf in (1.1N m)
184 See Fig. 14, 15, 22a, 22b,
Typ.
–
–
– 0.50
–
–
–
Max. 0.65
–
–
– 62
Units
A
W W/°C
V V/ns
°C
mJ A mJ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFB3306 |
INCHANGE |
N-Channel MOSFET | |
2 | IRFB3306PBF |
International Rectifier |
Power MOSFET | |
3 | IRFB3307 |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRFB3307 |
INCHANGE |
N-Channel MOSFET | |
5 | IRFB3307PbF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRFB3307Z |
INCHANGE |
N-Channel MOSFET | |
7 | IRFB3307ZPBF |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRFB33N15D |
International Rectifier |
Power MOSFET | |
9 | IRFB33N15D |
INCHANGE |
N-Channel MOSFET | |
10 | IRFB33N15DPbF |
International Rectifier |
Power MOSFET | |
11 | IRFB3004 |
INCHANGE |
N-Channel MOSFET | |
12 | IRFB3004GPbF |
International Rectifier |
Power MOSFET |