IRFB3004GPbF - International Rectifier

IRFB3004GPbF Power MOSFET

PD - 96237 IRFB3004GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode .

Features

ing Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw d f 340 240 195 1310 380 2.5 ± 20 4.4 -55 to + 175 300 10lbf in (1.1N m) ™ ™ W W/°C V V/ns °C x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Ãd e Thermal Resistance Symbol RθJC RθCS RθJA d 300 See Fig. 14, 15, 22a, 22b mJ A mJ Junction-to-Case Case-to-Sink, Flat Greased Surface, TO-220 Junction-to-Ambient, TO-220 jk Parameter Typ.
  –
  –
  – 0.50
  –
  –
  – Max. 0.40
  –.