IRFB3004 - INCHANGE

IRFB3004 N-Channel MOSFET

isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.75mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·H.

Features

·Static drain-source on-resistance: RDS(on) ≤1.75mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·Hard Switched and High Frequency Circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 340 IDM Drain Current-Single Pulsed 1310 PD Total Dissipation @TC=25℃ 380 Tj Max. Operating Junctio.