mTMlJ~~~ Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.12 n This IG"f'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of M.
• Low VCE(SAT) - 2.3V typ @ 20A
• Ultra-fast turn-on - 200 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling - 20 amps @ 100°C
N-CHANNEL
c
.~
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
maximum ratings (TC = 25° C) (unless otherwise specified)
RATING Collector-Emitter Voltage, VGE = OV
Collector-Gate Voltage, RGE = 1Mn
Continuous Drain Current@Tc= 100°C @Tc= 25°C
Pulsed Collector Current(1)
Gate-Emitter Voltage
Total Power Dissipation @Tc = 25°C Derate Above 25° C
Operating and Storage Junctiol} Temperature Range
SYMBOL VCES VCGR I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IGT8D21 |
GE |
Insulated Gate Bipolar Transistor | |
2 | IGT8E20 |
GE |
Insulated Gate Bipolar Transistor | |
3 | IGT8E21 |
GE |
Insulated Gate Bipolar Transistor | |
4 | IGT40R070D1E8220 |
Infineon |
Power Transistor | |
5 | IGT4D10 |
GE |
Insulated Gate Bipolar Transistor | |
6 | IGT4D11 |
GE |
Insulated Gate Bipolar Transistor | |
7 | IGT4E10 |
GE |
Insulated Gate Bipolar Transistor | |
8 | IGT4E11 |
GE |
Insulated Gate Bipolar Transistor | |
9 | IGT60R042D1 |
Infineon |
Power Transistor | |
10 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor | |
11 | IGT60R190D1 |
Infineon |
Power Transistor | |
12 | IGT60R190D1S |
Infineon |
600V enhancement-mode Power Transistor |