mTMlJ~~~~ Insulated Gate Bipolar Transistor IGT4D11~E11 10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON} = 0.27 il This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of .
• Low VCE(SAT) - 2.5V typ @ 10A
• Ultra-fast turn-on - 100 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling - 10 amps @ 100°C
N-CHANNEL
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DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
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1
.04811.221
.26516.731
.245(6.22:
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CASE
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TEMPE RATURE REFERENCE
/ POINT
. 1144511133.
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.32518.251-' .22015.591
~13. 01331
.00110.0251
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.500(12.7IMIN.
TEAM.3
.0331~.841
.02710.691
. 1~ h J - - . 1 0
•5.10925.162.74111
+--- .0551.39 .1 +---' .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IGT4D10 |
GE |
Insulated Gate Bipolar Transistor | |
2 | IGT40R070D1E8220 |
Infineon |
Power Transistor | |
3 | IGT4E10 |
GE |
Insulated Gate Bipolar Transistor | |
4 | IGT4E11 |
GE |
Insulated Gate Bipolar Transistor | |
5 | IGT60R042D1 |
Infineon |
Power Transistor | |
6 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor | |
7 | IGT60R190D1 |
Infineon |
Power Transistor | |
8 | IGT60R190D1S |
Infineon |
600V enhancement-mode Power Transistor | |
9 | IGT65R025D2 |
Infineon |
Power Transistor | |
10 | IGT65R035D2 |
Infineon |
Power Transistor | |
11 | IGT65R045D2 |
Infineon |
Power Transistor | |
12 | IGT65R055D2 |
Infineon |
Power Transistor |