IGT8E20 - GE

IGT8E20 Insulated Gate Bipolar Transistor

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.12 n This IG"f'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of M.

Features

• Low VCE(SAT) - 2.3V typ @ 20A
• Ultra-fast turn-on - 200 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling - 20 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) maximum ratings (TC = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGE = OV Collector-Gate Voltage, RGE = 1Mn Continuous Drain Current@Tc= 100°C @Tc= 25°C Pulsed Collector Current(1) Gate-Emitter Voltage Total Power Dissipation @Tc = 25°C Derate Above 25° C Operating and Storage Junctiol} Temperature Range SYMBOL VCES VCGR I.