IGT60R190D1 - Infineon

IGT60R190D1 Power Transistor

IGT60R190D1 IGT60R190D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (.

Features

 Enhancement mode transistor
  – Normally OFF switch
 Ultra fast switching
 No reverse-recovery charge
 Capable of reverse conduction
 Low gate charge, low output charge
 Superior commutation ruggedness
 Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) 1 SK G G SK 1 Benefits
 Improves system efficiency
 Improves power density
 Enables higher operating frequency
 System cost reduction savings
 Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications Industrial, telecom, datacenter SMPS based on the half-bridge t.