IGT8E21 - GE

IGT8E21 Insulated Gate Bipolar Transistor

mTM1J~~~ Insulated Gate Bipolar Transistor 20AMPEFlES 400, 500 VOLTS EQUIV. RDS(ON) =0.145 n. This IG"f"I Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and .

Features

• Low VCE(SAT) - 2..5V typ @ 20A
• Ultra-fast turn-on -150 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r r.6'S ('S.62)Y.'28 (3.2S) .II- r - ] _ C+±J/~ .2,S (S.46) .815 (20.70) --.l.. I,~u ]f::f:~:-.j:'l:-~~'2:l;-:,3i:.""" maximum ratings (Tc = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage, VGe = OV Collector-Gate Voltage, RGe = 1Mn. Continuous Drain Current @ TC = 90° C @TC=25°C Pulsed Collector Current<') Gate-Emitter.