IGT4D10 - GE

IGT4D10 Insulated Gate Bipolar Transistor

mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance .

Features

• Low VCE(SAT) - 2.5V typ @ 10A
• Ultra-fast turn-on -150 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling -10 amps @ 100°C N-CHANNEl c .~ CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . - - .I :1~g::~~II~ .05511.391 .04811.nl .265(6.731 - + - - + - - - t - .24516.221 _ CASE I- r .., TERMEFPEERRAENTUCERE - , / POINT .22015.591 ~ .00610.151 .00110.0251 TERM.l TERM.2 TERM.3 .0331~ 1I!bf.l0512.671 .027 ~~
•.09512.411 1+-" .05511.391 .1 I+- .04511.141--" .21015.331 .19014.821 ..0021511100..533811 .10712.721 .087.