IGT60R042D1 IGT60R042D1 600V CoolGaN™ enhancement-mode Power Transistor Features Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness Qualified for industrial applications according to JEDEC Standards (.
Enhancement mode transistor
– Normally OFF switch
Ultra fast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for industrial applications according to JEDEC
Standards (JESD47 and JESD22)
1
SK G
G SK
1
Benefits
Improves system efficiency
Improves power density
Enables higher operating frequency
System cost reduction savings
Reduces EMI
Gate Drain Kelvin Source Source
8 drain contact
7 1,2,3,4,5,6
Applications
Industrial, telecom, datacenter SMPS based on the half-bridge t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor | |
2 | IGT60R190D1 |
Infineon |
Power Transistor | |
3 | IGT60R190D1S |
Infineon |
600V enhancement-mode Power Transistor | |
4 | IGT65R025D2 |
Infineon |
Power Transistor | |
5 | IGT65R035D2 |
Infineon |
Power Transistor | |
6 | IGT65R045D2 |
Infineon |
Power Transistor | |
7 | IGT65R055D2 |
Infineon |
Power Transistor | |
8 | IGT65R140D2 |
Infineon |
Power Transistor | |
9 | IGT6D10 |
GE |
Insulated Gate Bipolar Transistor | |
10 | IGT6D11 |
GE |
Insulated Gate Bipolar Transistor | |
11 | IGT6D20 |
GE |
Insulated Gate Bipolar Transistor | |
12 | IGT6D21 |
GE |
Insulated Gate Bipolar Transistor |