mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance .
• Low VCE(SAT) - 2.5V typ @ 10A
• Ultra-fast turn-on -150 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling -10 amps @ 100°C
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IGT4E11 |
GE |
Insulated Gate Bipolar Transistor | |
2 | IGT40R070D1E8220 |
Infineon |
Power Transistor | |
3 | IGT4D10 |
GE |
Insulated Gate Bipolar Transistor | |
4 | IGT4D11 |
GE |
Insulated Gate Bipolar Transistor | |
5 | IGT60R042D1 |
Infineon |
Power Transistor | |
6 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor | |
7 | IGT60R190D1 |
Infineon |
Power Transistor | |
8 | IGT60R190D1S |
Infineon |
600V enhancement-mode Power Transistor | |
9 | IGT65R025D2 |
Infineon |
Power Transistor | |
10 | IGT65R035D2 |
Infineon |
Power Transistor | |
11 | IGT65R045D2 |
Infineon |
Power Transistor | |
12 | IGT65R055D2 |
Infineon |
Power Transistor |