FNK3207A - FNK

FNK3207A N-Channel Power MOSFET

The FNK3207A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =180A RDS(ON) <4.7mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high.

Features

● VDS =80V,ID =180A RDS(ON) <4.7mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK3207A FNK3207A TO-220 Reel Size - Tape width - Absolute Maximum Rating.