The FNK3205A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature ● VDS =60V,ID =110A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:4.9mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Aval.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FNK3205 |
FNK |
N-Channel Power MOSFET | |
2 | FNK3206 |
FNK |
N-Channel Power MOSFET | |
3 | FNK3206T |
FNK |
N-Channel Power MOSFET | |
4 | FNK3207A |
FNK |
N-Channel Power MOSFET | |
5 | FNK3035P |
FNK |
P-Channel Power MOSFET | |
6 | FNK3070PC |
FNK |
P-Channel Power MOSFET | |
7 | FNK3070PD |
FNK |
P-Channel Power MOSFET | |
8 | FNK3075PC |
FNK |
P-Channel Power MOSFET | |
9 | FNK3075PD |
FNK |
P-Channel Power MOSFET | |
10 | FNK3085 |
FNK |
P-Channel Power MOSFET | |
11 | FNK30H150 |
FNK |
N-Channel Power MOSFET | |
12 | FNK30H160 |
FNK |
N-Channel Power MOSFET |