TheFNK3035P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V, ID=-35A R DS(ON) < 10 mΩ @ VGS=-10V D G S Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stabil.
● VDS =-30V, ID=-35A
R DS(ON) < 10 mΩ @ VGS=-10V
D G
S Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Battery and loading switching
Marking and pin assignment
Top View
DFN5X6 Bottom View
PIN1
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK3035P
FNK3035P
DFN 5x6 -8L
Reel Size -
Tape width -
Quantity -
Absolute Maximum R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FNK3070PC |
FNK |
P-Channel Power MOSFET | |
2 | FNK3070PD |
FNK |
P-Channel Power MOSFET | |
3 | FNK3075PC |
FNK |
P-Channel Power MOSFET | |
4 | FNK3075PD |
FNK |
P-Channel Power MOSFET | |
5 | FNK3085 |
FNK |
P-Channel Power MOSFET | |
6 | FNK30H150 |
FNK |
N-Channel Power MOSFET | |
7 | FNK30H160 |
FNK |
N-Channel Power MOSFET | |
8 | FNK30H160D |
FNK |
N-Channel Power MOSFET | |
9 | FNK30H80 |
FNK |
N-Channel Power MOSFET | |
10 | FNK30H80A |
FNK |
N-Channel Power MOSFET | |
11 | FNK3205 |
FNK |
N-Channel Power MOSFET | |
12 | FNK3205A |
FNK |
N-Channel Power MOSFET |