FNK3206T - FNK

FNK3206T N-Channel Power MOSFET

The FNK 3206T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. Features ● VDS=60V; ID=210A@ VGS=10V; RDS(ON)< 3 mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good .

Features

● VDS=60V; ID=210A@ VGS=10V; RDS(ON)< 3 mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation FNK3206T Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-247 top view Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Cur.