The FNK3070PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=-30V, ID=-70A R DS(ON) < 8.3 mΩ @ VGS=-10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stabili.
● VDS=-30V, ID=-70A
R DS(ON) < 8.3 mΩ @ VGS=-10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Battery and loading switching
TO-251 top view
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3070PC
FNK3070PC TO-251(SIPARK)
3070PD
FNK3070PD TO-252(DPARK)
Reel Size -
Tape width -
Quantity -
Absolute Maximum.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FNK3070PC |
FNK |
P-Channel Power MOSFET | |
2 | FNK3075PC |
FNK |
P-Channel Power MOSFET | |
3 | FNK3075PD |
FNK |
P-Channel Power MOSFET | |
4 | FNK3035P |
FNK |
P-Channel Power MOSFET | |
5 | FNK3085 |
FNK |
P-Channel Power MOSFET | |
6 | FNK30H150 |
FNK |
N-Channel Power MOSFET | |
7 | FNK30H160 |
FNK |
N-Channel Power MOSFET | |
8 | FNK30H160D |
FNK |
N-Channel Power MOSFET | |
9 | FNK30H80 |
FNK |
N-Channel Power MOSFET | |
10 | FNK30H80A |
FNK |
N-Channel Power MOSFET | |
11 | FNK3205 |
FNK |
N-Channel Power MOSFET | |
12 | FNK3205A |
FNK |
N-Channel Power MOSFET |