The FNK3075PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,I =-75A R DS(ON) < 6.9mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity wit.
● VDS =-30V,I =-75A R DS(ON) < 6.9mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Battery and loading switching
TO-251 top view
FNK3075PC/D
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK3075PC
FNK3075PC
TO-251
FNK3075PD
FNK3075PD
TO-252
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FNK3075PC |
FNK |
P-Channel Power MOSFET | |
2 | FNK3070PC |
FNK |
P-Channel Power MOSFET | |
3 | FNK3070PD |
FNK |
P-Channel Power MOSFET | |
4 | FNK3035P |
FNK |
P-Channel Power MOSFET | |
5 | FNK3085 |
FNK |
P-Channel Power MOSFET | |
6 | FNK30H150 |
FNK |
N-Channel Power MOSFET | |
7 | FNK30H160 |
FNK |
N-Channel Power MOSFET | |
8 | FNK30H160D |
FNK |
N-Channel Power MOSFET | |
9 | FNK30H80 |
FNK |
N-Channel Power MOSFET | |
10 | FNK30H80A |
FNK |
N-Channel Power MOSFET | |
11 | FNK3205 |
FNK |
N-Channel Power MOSFET | |
12 | FNK3205A |
FNK |
N-Channel Power MOSFET |