FNK3205 - FNK

FNK3205 N-Channel Power MOSFET

The FNK3205 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK3205/55H12 General Features ● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stabi.

Features

● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package FNK3205 FNK3205 TO-220-3L Reel Size - Tape width - .