The FNK30H150 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =150A RDS(ON) <3.2 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stabil.
● VDS =30V,ID =150A RDS(ON) <3.2 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
To-220 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK30H150
FNK30H150
TO-220
Reel Size -
Tape.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FNK30H160 |
FNK |
N-Channel Power MOSFET | |
2 | FNK30H160D |
FNK |
N-Channel Power MOSFET | |
3 | FNK30H80 |
FNK |
N-Channel Power MOSFET | |
4 | FNK30H80A |
FNK |
N-Channel Power MOSFET | |
5 | FNK3035P |
FNK |
P-Channel Power MOSFET | |
6 | FNK3070PC |
FNK |
P-Channel Power MOSFET | |
7 | FNK3070PD |
FNK |
P-Channel Power MOSFET | |
8 | FNK3075PC |
FNK |
P-Channel Power MOSFET | |
9 | FNK3075PD |
FNK |
P-Channel Power MOSFET | |
10 | FNK3085 |
FNK |
P-Channel Power MOSFET | |
11 | FNK3205 |
FNK |
N-Channel Power MOSFET | |
12 | FNK3205A |
FNK |
N-Channel Power MOSFET |