FNK3070PC - FNK

FNK3070PC P-Channel Power MOSFET

The FNK3070PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=-30V, ID=-70A R DS(ON) < 8.3 mΩ @ VGS=-10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stabili.

Features

● VDS=-30V, ID=-70A R DS(ON) < 8.3 mΩ @ VGS=-10V Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Battery and loading switching TO-251 top view TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package 3070PC FNK3070PC TO-251(SIPARK) 3070PD FNK3070PD TO-252(DPARK) Reel Size - Tape width - Quantity - Absolute Maximum.