FIR150N06PG - First Semiconductor

FIR150N06PG N-Channel Enhancement Mode Power Mosfet

The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with hig.

Features

ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability Application ƽ Power switching application ƽ Hard Switched and High Frequency Circuits ƽ Uninterruptible Power Supply FIR150N06PG PIN Connection TO-220AB GDS Marking Diagram YAWW FIR150N06P Y = Year A = Assembly Location WW = Work Week FIR150N06P = Specific Device Code Package Marking And Ordering Informat.