FIR4N65F - INCHANGE

FIR4N65F N-Channel MOSFET

isc N-Channel Mosfet Transistor INCHANGE Semiconductor FIR4N65F ·FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation .

Features

·Drain Current
  –ID= 4A@ TC=25℃
·Drain Source Voltage- : VDSS= 650V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 650 V Gate-Source Voltage-Continuous ±30 V Drain Current-Continuous 4 A Drain Current-Single Plused 16 A Total Dissipati.