The FIRC5730W09-B20 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 730nm LED. Package Outline Schematic Anode Cathode CT Microelectronics Proprietary & Confidential Page 1 Rev 0 (Preliminary) Jul, 2013 FIRC5730W09-B20 SMD Type 730nm Infrared Emitter Absolute Maximum Rating at 250C Symbol Parameters .
High reliability
High total radiated power
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Light barrier
Description
The FIRC5730W09-B20 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 730nm LED.
Package Outline
Schematic
Anode
Cathode
CT Microelectronics Proprietary & Confidential
Page 1
Rev 0 (Preliminary) Jul, 2013
FIRC5730W09-B20 SMD Type 730nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF
Continuous Forward Current
IFP
Peak Forward Current
VR Revers.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FIR150N06PG |
First Semiconductor |
N-Channel Enhancement Mode Power Mosfet | |
2 | FIR20N120TDG |
American First Semiconductor |
IGBT | |
3 | FIR2N60FG |
First Semiconductor |
Advanced N-Ch Power MOSFET | |
4 | FIR3441AG |
First Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
5 | FIR4N65F |
INCHANGE |
N-Channel MOSFET | |
6 | FIR80N075P |
First Semiconductor |
N-Channel Power MOSFET | |
7 | FIR80N075PG |
First Semiconductor |
N-Channel Power MOSFET | |
8 | FIR8N60FG |
First Semiconductor |
Silicon N-Channel Power MOSFET | |
9 | FIRP1608X09-H5 |
CT Micro |
Infrared Emitter | |
10 | FI-5530C |
Fujitsu |
Image Scanner Manual | |
11 | FI-5530C2 |
Fujitsu |
Image Scanner Manual | |
12 | FI-A20C |
Japan Aviation Electronics |
Connector |