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FIR150N06PG |
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| Part Number | FIR150N06PG |
| Manufacturer | First Semiconductor |
| Description | The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ VDS =60V,ID =150A RDS(... |
| Features |
ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V
ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability
Application
ƽ Power switching application ƽ Hard Switched and High Frequency Circuits ƽ Uninterruptible Power Supply
FIR150N06PG
PIN Connection TO-220AB
GDS
Marking Diagram
YAWW
FIR150N06P
Y = Year A = Assembly Location WW = Work Week FIR150N06P = Specific Device Code
Package Marking And Ordering Informat... |
| Document |
 FIR150N06PG Data Sheet
PDF 4.05MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FIR20N120TDG |
American First Semiconductor |
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| 2 | FIR2N60FG |
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| 3 | FIR3441AG |
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| 4 | FIR4N65F |
INCHANGE |
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| 5 | FIR80N075P |
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