The FIRP1608X09-H5 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 750nm LED spectrally matched with phototransistor or photodiode. Package Outline Schematic Cathode Anode CT Micro Proprietary & Confidential Page 1 Rev 0 (Preliminary) Aug, 2015 FIRP1608X09-H5 SMD Type 750nm Infrared Emitter Absolute Ma.
Small double-end package
Viewing Angle = 37.50
High reliability
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Description
The FIRP1608X09-H5 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 750nm LED spectrally matched with phototransistor or photodiode.
Package Outline
Schematic
Cathode
Anode
CT Micro Proprietary & Confidential
Page 1
Rev 0 (Preliminary) Aug, 2015
FIRP1608X09-H5 SMD Type 750nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forwa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FIR150N06PG |
First Semiconductor |
N-Channel Enhancement Mode Power Mosfet | |
2 | FIR20N120TDG |
American First Semiconductor |
IGBT | |
3 | FIR2N60FG |
First Semiconductor |
Advanced N-Ch Power MOSFET | |
4 | FIR3441AG |
First Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
5 | FIR4N65F |
INCHANGE |
N-Channel MOSFET | |
6 | FIR80N075P |
First Semiconductor |
N-Channel Power MOSFET | |
7 | FIR80N075PG |
First Semiconductor |
N-Channel Power MOSFET | |
8 | FIR8N60FG |
First Semiconductor |
Silicon N-Channel Power MOSFET | |
9 | FIRC5730W09-B20 |
CT Micro |
SMD Type 730nm Infrared Emitter | |
10 | FI-5530C |
Fujitsu |
Image Scanner Manual | |
11 | FI-5530C2 |
Fujitsu |
Image Scanner Manual | |
12 | FI-A20C |
Japan Aviation Electronics |
Connector |