The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features ƽ VDS=75V;ID=80A@ VGS=10V; RDS(ON)<8mΩ @ VGS=10V ƽ Special process technology for high ESD capability ƽ Special designed for Convertors and power contro.
ƽ VDS=75V;ID=80A@ VGS=10V; RDS(ON)<8mΩ @ VGS=10V ƽ Special process technology for high ESD capability ƽ Special designed for Convertors and power controls ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation FIR80N075PG PIN Connection TO-220 GDS D G S Marking Diagram Application ƽ Power switching application ƽ Hard Switched and High Frequency Circuits ƽ Uninterruptible Power Supply Package Marking And Ordering Information Device Marking Device Device P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FIR80N075P |
First Semiconductor |
N-Channel Power MOSFET | |
2 | FIR8N60FG |
First Semiconductor |
Silicon N-Channel Power MOSFET | |
3 | FIR150N06PG |
First Semiconductor |
N-Channel Enhancement Mode Power Mosfet | |
4 | FIR20N120TDG |
American First Semiconductor |
IGBT | |
5 | FIR2N60FG |
First Semiconductor |
Advanced N-Ch Power MOSFET | |
6 | FIR3441AG |
First Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
7 | FIR4N65F |
INCHANGE |
N-Channel MOSFET | |
8 | FIRC5730W09-B20 |
CT Micro |
SMD Type 730nm Infrared Emitter | |
9 | FIRP1608X09-H5 |
CT Micro |
Infrared Emitter | |
10 | FI-5530C |
Fujitsu |
Image Scanner Manual | |
11 | FI-5530C2 |
Fujitsu |
Image Scanner Manual | |
12 | FI-A20C |
Japan Aviation Electronics |
Connector |