First semi NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), UPS,General inverter and other soft switching applications. FIR20N120TDG PIN Connection TO-3P/TO-247 G C E Marking Diagram YAWW FIR20N120TD Y = Year A = Assembly Location WW = Work Week FIR20N120TD= Specific Device Code Absolute Maximum R.
1200V,20A,Vce(on)(typ)=2.3V@Vge=15V
High speed switching
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA using NPT technology
General Description
First semi NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), UPS,General inverter and other soft switching applications.
FIR20N120TDG
PIN Connection TO-3P/TO-247
G C E
Marking Diagram
YAWW FIR20N120TD
Y = Year A = Assembly Location WW = Work Week FIR20N120TD= Specific Device Code
Absolute Maximum Ratings
Symbol
Parameter
VCES VGES
IC
ICM IF IFM tsc
PD
TJ T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FIR2N60FG |
First Semiconductor |
Advanced N-Ch Power MOSFET | |
2 | FIR150N06PG |
First Semiconductor |
N-Channel Enhancement Mode Power Mosfet | |
3 | FIR3441AG |
First Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
4 | FIR4N65F |
INCHANGE |
N-Channel MOSFET | |
5 | FIR80N075P |
First Semiconductor |
N-Channel Power MOSFET | |
6 | FIR80N075PG |
First Semiconductor |
N-Channel Power MOSFET | |
7 | FIR8N60FG |
First Semiconductor |
Silicon N-Channel Power MOSFET | |
8 | FIRC5730W09-B20 |
CT Micro |
SMD Type 730nm Infrared Emitter | |
9 | FIRP1608X09-H5 |
CT Micro |
Infrared Emitter | |
10 | FI-5530C |
Fujitsu |
Image Scanner Manual | |
11 | FI-5530C2 |
Fujitsu |
Image Scanner Manual | |
12 | FI-A20C |
Japan Aviation Electronics |
Connector |