FIR3441AG - First Semiconductor

FIR3441AG P-Channel Enhancement Mode Power MOSFET

The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features • VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V • High Power and current handing capability • Lead f.

Features

• VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V
• High Power and current handing capability
• Lead free product is acquired
• Surface Mount Package Application
• PWM applications
• Load switch
• Power management FIR3441AG Top vlew SOT-23 D G S D G S Schematic diagram Marking and pin Assignment Package Marking And Ordering Information Device Marking Device Device Package 3401A NCE3401A SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Sou.