FIR8N60FG - First Semiconductor

FIR8N60FG Silicon N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. (1) Pulse duration ≤300μs, duty cycle ≤2% 16 RDS(on) - On-State Resistance (mΩ) 14 12 10 8 6 4 2 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 75A TC = 125ºC Id = 75A GATE CHARGE 10 ID = 75A VDS = 20V 8 6 4 2 6 8 10 12 14 16 VGS - .

Features

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 30 4.6 VGS = 4.5V VGS = 10V 1.9 5.4 3.6 UNIT V nC nC mΩ mΩ V
•
•
•
•
•
•
•
• 2 ORDERING INFORMATION Device CSD18503KCS Package TO-220 Plastic Package Media Tube Qty 50 Ship Tube APPLICATIONS
•
•
• DC-DC Conversion Secondary Side Synchronous Rectifier Motor .