FDS6675BZ - Fairchild Semiconductor

FDS6675BZ P-Channel PowerTrench MOSFET

Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = 13mΩ at VGS = -10V, ID = -11.

Features

This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A „ Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 5.4 KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handi.