FDS6675A - Fairchild Semiconductor

FDS6675A 30V P-Channel PowerTrench MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 25V). Applications • Power management • Load switch • Battery protection Features • –11 A, –30 V RDS(ON) = 13 mΩ @ VGS = –10 V RDS(ON).

Features

•
  –11 A,
  –30 V RDS(ON) = 13 mΩ @ VGS =
  –10 V RDS(ON) = 19 mΩ @ VGS =
  –4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 54 63 72 81 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range .