This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 12.5 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 9.5 mΩ @ VGS = 4.5 V • High performance .
• 12.5 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (33 nC typical)
• High power and current handling capability
Applications
• DC/DC converter
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ±12
(Note 1a)
Units
V V A W
12.5 50 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6670A |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDS6670AS |
Fairchild Semiconductor |
30V N-Channel MOSFET | |
3 | FDS6670S |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDS6673AZ |
Fairchild Semiconductor |
P-Channel MOSFET | |
5 | FDS6673BZ |
ON Semiconductor |
P-Channel MOSFET | |
6 | FDS6673BZ |
Fairchild Semiconductor |
P-Channel MOSFET | |
7 | FDS6673BZ-F085 |
ON Semiconductor |
P-Channel MOSFET | |
8 | FDS6673BZ_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
9 | FDS6675 |
Fairchild Semiconductor |
Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET | |
10 | FDS6675 |
ON Semiconductor |
P-Channel MOSFET | |
11 | FDS6675A |
Fairchild Semiconductor |
30V P-Channel PowerTrench MOSFET | |
12 | FDS6675BZ |
On Semiconductor |
P-Channel MOSFET |