Features This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery.
This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. -11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. Low gate charge (30nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling .
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6670A |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDS6670AS |
Fairchild Semiconductor |
30V N-Channel MOSFET | |
3 | FDS6670S |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDS6672A |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDS6673AZ |
Fairchild Semiconductor |
P-Channel MOSFET | |
6 | FDS6673BZ |
ON Semiconductor |
P-Channel MOSFET | |
7 | FDS6673BZ |
Fairchild Semiconductor |
P-Channel MOSFET | |
8 | FDS6673BZ-F085 |
ON Semiconductor |
P-Channel MOSFET | |
9 | FDS6673BZ_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
10 | FDS6675A |
Fairchild Semiconductor |
30V P-Channel PowerTrench MOSFET | |
11 | FDS6675BZ |
On Semiconductor |
P-Channel MOSFET | |
12 | FDS6675BZ |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET |