This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A.
Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6.5kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant Qualified to AEC Q101 DD D D SO-8 S SSG 5 6 7 8 4 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current -Continuous -Pulsed (Note1a) Power Dissipation for Single O.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6673BZ-F085 |
ON Semiconductor |
P-Channel MOSFET | |
2 | FDS6673BZ |
ON Semiconductor |
P-Channel MOSFET | |
3 | FDS6673BZ |
Fairchild Semiconductor |
P-Channel MOSFET | |
4 | FDS6673AZ |
Fairchild Semiconductor |
P-Channel MOSFET | |
5 | FDS6670A |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDS6670AS |
Fairchild Semiconductor |
30V N-Channel MOSFET | |
7 | FDS6670S |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDS6672A |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDS6675 |
Fairchild Semiconductor |
Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET | |
10 | FDS6675 |
ON Semiconductor |
P-Channel MOSFET | |
11 | FDS6675A |
Fairchild Semiconductor |
30V P-Channel PowerTrench MOSFET | |
12 | FDS6675BZ |
On Semiconductor |
P-Channel MOSFET |