The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Applications x DC/DC converter .
x 13.5 A, 30 V. RDS(ON) max= 9.0 m: @ VGS = 10 V RDS(ON) max= 11.5 m: @ VGS = 4.5 V
x Includes SyncFET Schottky body diode x Low gate charge (27nC typical) x High performance trench technology for extremely low
RDS(ON) and fast switching x High power and current handling capability x RoHS Compliant
D D D D
SO-8
G SS S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
(Note 1c)
TJ, TSTG
Operating and St.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6670A |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDS6670S |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDS6672A |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDS6673AZ |
Fairchild Semiconductor |
P-Channel MOSFET | |
5 | FDS6673BZ |
ON Semiconductor |
P-Channel MOSFET | |
6 | FDS6673BZ |
Fairchild Semiconductor |
P-Channel MOSFET | |
7 | FDS6673BZ-F085 |
ON Semiconductor |
P-Channel MOSFET | |
8 | FDS6673BZ_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
9 | FDS6675 |
Fairchild Semiconductor |
Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET | |
10 | FDS6675 |
ON Semiconductor |
P-Channel MOSFET | |
11 | FDS6675A |
Fairchild Semiconductor |
30V P-Channel PowerTrench MOSFET | |
12 | FDS6675BZ |
On Semiconductor |
P-Channel MOSFET |