FDS6673AZ - Fairchild Semiconductor

FDS6673AZ P-Channel MOSFET

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and saf.

Features

•
  –14.5 A,
  –30 V. RDS(ON) = 7.2 mΩ @ VGS =
  –10 V RDS(ON) = 11 mΩ @ VGS =
  – 4.5 V
• Extended VGSS range (
  –25V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings
  –30 +25 (Note 1a) Units V V A W
  –14.5
  –50 2.5 1.2 1.0
  –55 to +175 Power Dissipation for Single Op.