FDS6673BZ - Fairchild Semiconductor

FDS6673BZ P-Channel MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features „ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A.

Features

„ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A „ Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 6.5kV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Operating and Storage Temperature Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipatio.