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FDS6675BZ |
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| Part Number | FDS6675BZ |
| Manufacturer | Fairchild Semiconductor |
| Description | Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well su... |
| Features |
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A
Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 5.4 KV typical (note 3) High performance trench technology for extremely low
rDS(on)
High power and current handi... |
| Document |
 FDS6675BZ Data Sheet
PDF 396.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS6675BZ |
On Semiconductor |
P-Channel MOSFET |
|
| 2 | FDS6675 |
Fairchild Semiconductor |
Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET |
|
| 3 | FDS6675 |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDS6675A |
Fairchild Semiconductor |
30V P-Channel PowerTrench MOSFET |
|
| 5 | FDS6670A |
Fairchild Semiconductor |
N-Channel MOSFET |
|