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FDS6675 |
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| Part Number | FDS6675 |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low ga... |
| Features |
-11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V, RDS(ON) = 0.020 Ω @ VGS = -4.5 V. Low gate charge (30nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D D D
D
5
4 3 2 1
S FD 75 66
pin 1
6
G
7 8
SO-8
S S
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
FDS6675 Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c) (N... |
| Document |
 FDS6675 Data Sheet
PDF 247.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS6670A |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDS6670AS |
Fairchild Semiconductor |
30V N-Channel MOSFET |
|
| 3 | FDS6670S |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDS6672A |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDS6673AZ |
Fairchild Semiconductor |
P-Channel MOSFET |
|