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FDS6673BZ_F085 |
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| Part Number | FDS6673BZ_F085 |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Po... |
| Features |
Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6.5kV typical (note 3) High performance trench technology for extremely low
rDS(on) High power and current handling capability
RoHS compliant Qualified to AEC Q101
DD D D
SO-8
S SSG
5 6 7 8
4 3 2 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous -Pulsed
(Note1a)
Power Dissipation for Single O... |
| Document |
 FDS6673BZ_F085 Data Sheet
PDF 462.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS6673BZ-F085 |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDS6673BZ |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDS6673BZ |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 4 | FDS6673AZ |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 5 | FDS6670A |
Fairchild Semiconductor |
N-Channel MOSFET |
|