This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. Applications Active Clamp Switch Load Switch Top Bottom Pin 1 SS D S S GS D SD D D D GD D Power 56 MOSFET.
Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg This product is optimised for fast switching applications as well as load switch applications 100% UIL tested RoHS Compliant October 2014 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. Applications Acti.
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is espe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMS86200 |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDMS86200 |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDMS86200DC |
Fairchild Semiconductor |
MOSFET | |
4 | FDMS86200DC |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDMS86201 |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDMS86202 |
Fairchild Semiconductor |
MOSFET | |
7 | FDMS86202ET120 |
Fairchild Semiconductor |
MOSFET | |
8 | FDMS8622 |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDMS86250 |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FDMS86252 |
Fairchild Semiconductor |
N-Channel MOSFET | |
11 | FDMS86255 |
Fairchild Semiconductor |
MOSFET | |
12 | FDMS86255 |
ON Semiconductor |
N-Channel MOSFET |