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FDMS86263P |
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| Part Number | FDMS86263P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized ... |
| Features |
Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology
optimized for low Qg
This product is optimised for fast switching applications as well as load switch applications
100% UIL tested
RoHS Compliant
October 2014
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
Applications
Acti... |
| Document |
 FDMS86263P Data Sheet
PDF 310.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMS86263P |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDMS86200 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDMS86200 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDMS86200DC |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDMS86200DC |
ON Semiconductor |
N-Channel MOSFET |
|