FDMS86201 - Fairchild Semiconductor

FDMS86201 N-Channel MOSFET

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A „ Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power.

Features

General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A „ Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC-DC Conversion Top Bottom Pin 1.