Shielded Gate MOSFET Technology Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This proce.
General Description Shielded Gate MOSFET Technology Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. MSL1 robust package design 100% UIL tested RoHS Compliant Application DC-DC Conversion Top Bottom Pin 1 S .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMS86252 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDMS86255 |
Fairchild Semiconductor |
MOSFET | |
3 | FDMS86255 |
ON Semiconductor |
N-Channel MOSFET | |
4 | FDMS86255ET150 |
Fairchild Semiconductor |
MOSFET | |
5 | FDMS86200 |
ON Semiconductor |
N-Channel MOSFET | |
6 | FDMS86200 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDMS86200DC |
Fairchild Semiconductor |
MOSFET | |
8 | FDMS86200DC |
ON Semiconductor |
N-Channel MOSFET | |
9 | FDMS86201 |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FDMS86202 |
Fairchild Semiconductor |
MOSFET | |
11 | FDMS86202ET120 |
Fairchild Semiconductor |
MOSFET | |
12 | FDMS8622 |
Fairchild Semiconductor |
N-Channel MOSFET |