FDMS86202ET120 - Fairchild Semiconductor

FDMS86202ET120 MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC-DC Conversion Top Pin 1 Bottom S Pin 1 S S G D D D D Power 56 MOSFET Maximum Ratings TA =.

Features

„ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC-DC Co.