FDMS86252 - Fairchild Semiconductor

FDMS86252 N-Channel MOSFET

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A „ Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A „ Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This proce.

Features

General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A „ Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A „ Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Application „ DC-DC Conversion Top Bottom Pin 1 S .