FDMS86255 - Fairchild Semiconductor

FDMS86255 MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications „ OringFET / Load Switching „ Synchronous rectification „ DC-DC Conversion „ RoHS Compliant Top .

Features

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A „ Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performa.