FDMS8622 - Fairchild Semiconductor

FDMS8622 N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications  POE Protection Switch  DC-DC Switch Top Bottom Pin 1 SS D S S G S D Power 56 D D D D MOSFET Maximum Ratings TA.

Features

 Shielded Gate MOSFET Technology
 Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A
 Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A
 High performance trench technology for extremely low rDS(on)
 High power and current handling capability in a widely used surface mount package
 100% UIL Tested
 Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications
 P.